r-1 plastic-encapsulate diodes hd zc 44 1 h igh diode semiconductor r-1 features i o 1a vrrm 50v-1000v high surge current capability applications rectifier marking polarity: color band denotes cathode 1hx x:from 1 to 8 1h1 thru 1h8 high efficient rectifier item symbol unit i f(av) i fsm i 60hz half-sine wave, resistance load, ta=50 60hz half-sine wave,1 cycle, ta=25 300 8 1.0 30 1h1 item symbol unit test condition 1 2 3 4 5 6 7 8 peak forward voltage v fm v i fm =1.0a i rrm1 t a =25 5 peak reverse current i rrm2 a v rm =v rrm t a =125 50 reverse recovery time t rr ns i f =0.5a i r =1a i rr =0.25a 50 75 thermal resistance(typical) r j-a /w between junction and ambient 50 1.0 1.3 1.7 1h1 35 70 140 280 420 560 700 210 max i mum r m s v rms v vo ltage
7 \ s l f d o & k d u d f w h u l v w l f v 2 igh diode semiconductor v r d r l i f 0 if i r i rr t t rr i fig.5: diagram of circuit and testing wave form of reverse recovery time if(a) tj=25 pulse width=300us 1% duty cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 10 20 vf(v) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1h6-1h8 1h4-1h5 1h1-1h3 fig.3: typical forward characteristics 0 50 150 fig.1: forward current derating curve io(a) single phase half wave 60hz resistive or inductive load 0.375''(9.5mm) lead length 100 0.2 0.4 0.6 0.8 1.0 0 fig.4:typical reverse characteristics voltage(%) ir(ua) tj=25 tj=125 tj=100 0.01 0.1 0 20 40 60 80 100 1.0 10 100 1000 ifsm(a) number of cycles fig.2 : maximum non-repetitive forward surge current 8.3ms single half sine wave jedec method 1 2 10 20 100 10 20 30 40 50
3 jshd jshd h igh diode semiconductor r-1 dia unit: in inches (millimeters) dia 1.0(25.4) min .130(3.30) .118(3.00) .025(0.64) .021(0.53) .107(2.70) .080(2.00) 1.0(25.4) min
4 h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers
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